Product Summary
The FQD2N90 is a N-Channel enhancement mode power field effect transistor produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been expecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device is well suited for high efficiency switch mode power supply.
Parametrics
Absolute maximum ratings: (1)VDSS, drain-source voltage: 900v; (2)ID, drain current: 1.7A at continuous(Tc=25鈩?; 1.08A at at continuous(Tc=100鈩?; (3)IDM, drain current: 6.8 A at plused; (4)VGSS, gate-source voltage: 卤30v; (5)EAS, single pulsed avalanche energy: 170mJ; (6)IAR, avalanche current: 1.7A; (7)EAR, repectitive avalanche energy: 5.0mJ; (8)dv/dt, peak diode recovery dv/dt: 4.0v/ns; (9)PD, power dissipation: 2.5w at TA=25鈩? 50w at TC=25鈩? (10)power dissipation derate above 25鈩? 0.4 w/鈩? (11)TJ, TSTG, operating and storage temperature raange: -55 to 150鈩? (12)TL, maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds: 300鈩?
Features
Features: (1)1.7A, 900V, RDS(on) = 7.2惟 @VGS = 10 V; (2)Low gate charge ( typical 12 nC); (3)Low Crss ( typical 5.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
<IMG src="http://www.seekic.com/uploadfile/ic-mfg/201142724644298.jpg" border=0>
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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FQD2N90TF |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
Negotiable |
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FQD2N90TM |
Fairchild Semiconductor |
MOSFET 900V N-Channel QFET |
Data Sheet |
Negotiable |
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